MTP2N85 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP2N85
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 850 V
Максимально допустимый постоянный ток стока |Id|: 2 A
Сопротивление сток-исток открытого транзистора (Rds): 8 Ohm
Тип корпуса: TO-220AB
MTP2N85 Datasheet (PDF)
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
mtp2n40erev0bx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
mtp2n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra
mtp2n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
mtp2n2222a p2n2222a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti
mtp2n60erev2a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
mtp2n2907a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current
mtp2n40e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
mtp2n50e.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2
mtp2n50.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MTP2N50FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-S
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