MTP3N100 MOSFET Datasheet: N-Ch, 1000V, 3A. Full specification with pinout and replacement list

MTP3N100 Specs and Replacement

Type Designator: MTP3N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-220AB

MTP3N100 substitution

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MTP3N100 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒