MTP3N100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP3N100
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 1000 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Сопротивление сток-исток открытого транзистора (Rds): 4 Ohm
Тип корпуса: TO-220AB
MTP3N100 Datasheet (PDF)
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
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mtp3n100e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
mtp3n100e-.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
mtp3n120e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS
mtp3n120e-.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS
mtp3n120e.pdf
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MTP3N120EDesigners Data SheetTMOS E-FET.Power Field EffectTransistorN-Channel Enhancement-Mode Siliconhttp://onsemi.comGateThis advanced high-voltage TMOS E-FET is designed to withstandhigh energy in the avalanche mode and switch efficiently. This newhigh energy device also offers a drain-to-source diode with fastTO-220ABrecovery time. Designed for high voltage, hi
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .