MTP3N55 Datasheet and Replacement
Type Designator: MTP3N55
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220AB
MTP3N55 substitution
MTP3N55 Datasheet (PDF)
mtp3n55.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP3N55 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3
mtp3n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
mtp3n50erev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
Datasheet: MTP2P50EG , MTP3055V , MTP30P06V , MTP36N06V , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , IRFP064N , MTP3N75 , MTP3N80 , MTP3N95 , MTP3P25 , MTP4N08 , MTP4N10 , MTP4N40E , MTP4N45 .
History: SM6008NF | HAT2174N | 2SK1813
Keywords - MTP3N55 MOSFET datasheet
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History: SM6008NF | HAT2174N | 2SK1813
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