MTP3N55 Specs and Replacement
Type Designator: MTP3N55
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220AB
MTP3N55 substitution
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MTP3N55 datasheet
mtp3n55.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP3N55 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3... See More ⇒
mtp3n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒
mtp3n50erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒
Detailed specifications: MTP2P50EG, MTP3055V, MTP30P06V, MTP36N06V, MTP3N100, MTP3N120E, MTP3N35, MTP3N40, AO4468, MTP3N75, MTP3N80, MTP3N95, MTP3P25, MTP4N08, MTP4N10, MTP4N40E, MTP4N45
Keywords - MTP3N55 MOSFET specs
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