All MOSFET. MTP4N08 Datasheet

 

MTP4N08 Datasheet and Replacement


   Type Designator: MTP4N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB
 

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MTP4N08 Datasheet (PDF)

 ..1. Size:107K  njs
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MTP4N08

 9.1. Size:254K  motorola
 mtp4n50erev1a.pdf pdf_icon

MTP4N08

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N50E/DDesigner's Data SheetMTP4N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to4.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new

 9.2. Size:245K  motorola
 mtp4n80e.pdf pdf_icon

MTP4N08

MTP4N80 PCB24MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N80E/DDesigner's Data SheetMTP4N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESs

 9.3. Size:138K  motorola
 mtp4n40e.pdf pdf_icon

MTP4N08

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N40E/DDesigner's Data SheetMTP4N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

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Datasheet: MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 , MTP3P25 , IRF840 , MTP4N10 , MTP4N40E , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 .

History: APT3580BN | RSR030N06

Keywords - MTP4N08 MOSFET datasheet

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