MTP5N35 Datasheet and Replacement
Type Designator: MTP5N35
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220AB
MTP5N35 substitution
MTP5N35 Datasheet (PDF)
mtp5n40e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP5N40E/DDesigner's Data SheetMTP5N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to5.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new
mtp5n40erev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP5N40E/DDesigner's Data SheetMTP5N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to5.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new
Datasheet: MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , MTP50P03HDLG , MTP5N05 , MTP5N06 , IRF3710 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 , MTP5P25 , MTP6N60E , MTP6P20E .
History: HGA046NE6AL | MIC94052BC6TR | IPD70N12S3L-12 | GSM9435WS | IPP65R660CFD | IPC100N04S5L-1R1 | APT8024B2VFR
Keywords - MTP5N35 MOSFET datasheet
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History: HGA046NE6AL | MIC94052BC6TR | IPD70N12S3L-12 | GSM9435WS | IPP65R660CFD | IPC100N04S5L-1R1 | APT8024B2VFR
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