MTP5N35 MOSFET Datasheet: N-Ch, 350V, 5A. Full specification with pinout and replacement list

MTP5N35 Specs and Replacement

Type Designator: MTP5N35

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220AB

MTP5N35 substitution

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MTP5N35 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒

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