MTP5N40 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP5N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220AB

MTP5N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP5N40 Datasheet (PDF)

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mtm5n35 mtm5n40 mtp5n35 mtp5n40.pdf

0.1. Size:171K motorola
mtp5n40e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP5N40E/DDesigner's Data SheetMTP5N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to5.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new

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mtp5n40erev1a.pdf