MTP5N40E Specs and Replacement
Type Designator: MTP5N40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220AB
MTP5N40E substitution
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MTP5N40E datasheet
mtp5n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒
mtp5n40erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒
Detailed specifications: MTP4N85, MTP4N90, MTP50N06V, MTP50P03HDLG, MTP5N05, MTP5N06, MTP5N35, MTP5N40, IRF3710, MTP5N60, MTP5P18, MTP5P20, MTP5P25, MTP6N60E, MTP6P20E, MTP7N18, MTP7N20
Keywords - MTP5N40E MOSFET specs
MTP5N40E cross reference
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