All MOSFET. MTP7N18 Datasheet

 

MTP7N18 Datasheet and Replacement


   Type Designator: MTP7N18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220AB
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MTP7N18 Datasheet (PDF)

 ..1. Size:169K  fairchild semi
 mtp7n18 mtp7n20.pdf pdf_icon

MTP7N18

 9.1. Size:223K  motorola
 mtp7n20erev0b.pdf pdf_icon

MTP7N18

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP7N20E/DDesigner's Data SheetMTP7N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high7.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic

 9.2. Size:192K  motorola
 mtp7n20e.pdf pdf_icon

MTP7N18

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP7N20E/DDesigner's Data SheetMTP7N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high7.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic

 9.3. Size:57K  njs
 mtp7n60.pdf pdf_icon

MTP7N18

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Keywords - MTP7N18 MOSFET datasheet

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