MTP7N18 MOSFET Datasheet: N-Ch, 180V, 7A. Full specification with pinout and replacement list

MTP7N18 Specs and Replacement

Type Designator: MTP7N18

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220AB

MTP7N18 substitution

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MTP7N18 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP7N20E/D Designer's Data Sheet MTP7N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 7.0 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effic... See More ⇒

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