MTP7N18 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP7N18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220AB

MTP7N18 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP7N18 Datasheet (PDF)

..1. Size:169K fairchild semi
mtp7n18 mtp7n20.pdf

9.1. Size:223K motorola
mtp7n20erev0b.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP7N20E/DDesigner's Data SheetMTP7N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high7.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic

9.2. Size:192K motorola
mtp7n20e.pdf