MTP7N60 Datasheet and Replacement
Type Designator: MTP7N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220C
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MTP7N60 Datasheet (PDF)
mtp7n20erev0b.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP7N20E/DDesigner's Data SheetMTP7N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high7.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic
mtp7n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP7N20E/DDesigner's Data SheetMTP7N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high7.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TK35S04K3L | SI2312A | CED6336 | PE6W8DX | STU6NF10 | H8N60P | FQB6N70TM
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History: TK35S04K3L | SI2312A | CED6336 | PE6W8DX | STU6NF10 | H8N60P | FQB6N70TM
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