MTW10N40E PDF and Equivalents Search

 

MTW10N40E Specs and Replacement

Type Designator: MTW10N40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-247AE

MTW10N40E substitution

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MTW10N40E datasheet

 ..1. Size:74K  motorola
 mtw10n40e.pdf pdf_icon

MTW10N40E

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 8.1. Size:121K  motorola
 mtw10n100e.pdf pdf_icon

MTW10N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW10N100E/D Designer's Data Sheet MTW10N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 10 AMPERES 1000 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.3 OHM scheme to pro... See More ⇒

 8.2. Size:192K  motorola
 mtw10n100erev3.pdf pdf_icon

MTW10N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW10N100E/D Designer's Data Sheet MTW10N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 10 AMPERES 1000 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.3 OHM scheme to pro... See More ⇒

Detailed specifications: MTP7P06, MTP8N20, MTP8N50E, MTP8N60, MTP8P08, MTP8P10, MTP8P25, MTW10N100E, K3569, MTW14N50E, MTW16N40E, MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E

Keywords - MTW10N40E MOSFET specs

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