MTW10N40E Datasheet and Replacement
Type Designator: MTW10N40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO-247AE
MTW10N40E substitution
MTW10N40E Datasheet (PDF)
mtw10n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro
mtw10n100erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro
Datasheet: MTP7P06 , MTP8N20 , MTP8N50E , MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , SPP20N60C3 , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E .
History: INK021AAP1 | IXTT10P50
Keywords - MTW10N40E MOSFET datasheet
MTW10N40E cross reference
MTW10N40E equivalent finder
MTW10N40E lookup
MTW10N40E substitution
MTW10N40E replacement
History: INK021AAP1 | IXTT10P50
LIST
Last Update
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42 | 2n5551 transistor | a1015 transistor