All MOSFET. MTW10N40E Datasheet

 

MTW10N40E Datasheet and Replacement


   Type Designator: MTW10N40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-247AE
 

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MTW10N40E Datasheet (PDF)

 ..1. Size:74K  motorola
 mtw10n40e.pdf pdf_icon

MTW10N40E

 8.1. Size:121K  motorola
 mtw10n100e.pdf pdf_icon

MTW10N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro

 8.2. Size:192K  motorola
 mtw10n100erev3.pdf pdf_icon

MTW10N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro

Datasheet: MTP7P06 , MTP8N20 , MTP8N50E , MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , 12N60 , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E .

History: AON6760 | AOW25S65 | AON6774 | DMN3033LSN | GTT8205S | SI4166DY | UPA1870BGR

Keywords - MTW10N40E MOSFET datasheet

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