MTW14N50E Datasheet and Replacement
Type Designator: MTW14N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-247AE
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MTW14N50E Datasheet (PDF)
mtw14n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 14 AMPERES500 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.40 OHMenergy in th
mtw14n50e.pdf
MTW14N50EPreferred DevicePower MOSFET14 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation14 AMPERESmodes. The new
mtw14n50erev4.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 14 AMPERES500 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.40 OHMenergy in th
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: GSM3410 | SVGP107R0NL5 | CSD18503KCS | BSC076N06NS3G | SIHFR9012 | IRFIZ44A | 2P986V
Keywords - MTW14N50E MOSFET datasheet
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History: GSM3410 | SVGP107R0NL5 | CSD18503KCS | BSC076N06NS3G | SIHFR9012 | IRFIZ44A | 2P986V
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