MTW14N50E Datasheet and Replacement
Type Designator: MTW14N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-247AE
MTW14N50E substitution
MTW14N50E Datasheet (PDF)
mtw14n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 14 AMPERES500 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.40 OHMenergy in th
mtw14n50e.pdf
MTW14N50EPreferred DevicePower MOSFET14 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation14 AMPERESmodes. The new
mtw14n50erev4.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 14 AMPERES500 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.40 OHMenergy in th
Datasheet: MTP8N20 , MTP8N50E , MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , IRFP260 , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E .
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