MTW14N50E MOSFET Datasheet: N-Ch, 500V, 14A. Full specification with pinout and replacement list

MTW14N50E Specs and Replacement

Type Designator: MTW14N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-247AE

MTW14N50E substitution

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MTW14N50E datasheet

..1. Size:178K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW14N50E/D Designer's Data Sheet MTW14N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 14 AMPERES 500 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.40 OHM energy in th... See More ⇒

..2. Size:103K onsemi
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MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading http //onsemi.com performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation 14 AMPERES modes. The new ... See More ⇒

0.1. Size:205K motorola
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