All MOSFET. MTW8N50E Datasheet

 

MTW8N50E Datasheet and Replacement


   Type Designator: MTW8N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-247AE
 
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MTW8N50E Datasheet (PDF)

 ..1. Size:70K  motorola
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MTW8N50E

 9.1. Size:194K  motorola
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MTW8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW8N60E/DDesigner's Data SheetMTW8N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 8.0 AMPERES600 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.55 OHMscheme to provid

Datasheet: MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , IRFP450 , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL .

History: 5N65N

Keywords - MTW8N50E MOSFET datasheet

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