All MOSFET. MTW8N50E Datasheet

 

MTW8N50E MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTW8N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-247AE

 MTW8N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTW8N50E Datasheet (PDF)

 ..1. Size:70K  motorola
 mtw8n50e.pdf

MTW8N50E MTW8N50E

 9.1. Size:194K  motorola
 mtw8n60e.pdf

MTW8N50E MTW8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW8N60E/DDesigner's Data SheetMTW8N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 8.0 AMPERES600 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.55 OHMscheme to provid

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDG315N

 

 
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