MTW8N50E Datasheet and Replacement
Type Designator: MTW8N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 176 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-247AE
MTW8N50E Datasheet (PDF)
mtw8n60e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW8N60E/DDesigner's Data SheetMTW8N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 8.0 AMPERES600 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.55 OHMscheme to provid
Datasheet: MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , IRFP450 , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL .
History: 5N65N
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History: 5N65N



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