MTW8N50E Specs and Replacement
Type Designator: MTW8N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 92 nC
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 176 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-247AE
MTW8N50E substitution
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MTW8N50E datasheet
mtw8n60e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW8N60E/D Designer's Data Sheet MTW8N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 8.0 AMPERES 600 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.55 OHM scheme to provid... See More ⇒
Detailed specifications: MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, NCEP15T14, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L, MVGSF1N03LT1G, MVMBF0201NL
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HM4449
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