MVB50P03HDL Datasheet and Replacement
Type Designator: MVB50P03HDL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 340 nS
Cossⓘ - Output Capacitance: 1550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: D2PAK
MVB50P03HDL substitution
MVB50P03HDL Datasheet (PDF)
mvb50p03hdl mvb50p03hdlt4g.pdf

MTB50P03HDL,MVB50P03HDLT4GP-Channel Power MOSFET50 A, 30 V, Logic Level D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed forhttp://onsemi.comlow voltage, high speed switching applications in power supplies,converters and PWM motor
Datasheet: MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , MTY100N10E , 18N50 , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL , MVSF2N02EL , MVSF2N02ELT1G .
History: MVGSF1N03LT1G | SSM3J108TU | MSD80N03 | APT10035LFLL | MSD4N70 | MEE4292K-G | AOWF15S65
Keywords - MVB50P03HDL MOSFET datasheet
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History: MVGSF1N03LT1G | SSM3J108TU | MSD80N03 | APT10035LFLL | MSD4N70 | MEE4292K-G | AOWF15S65



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