MVB50P03HDLT4G PDF and Equivalents Search

 

MVB50P03HDLT4G Specs and Replacement

Type Designator: MVB50P03HDLT4G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 340 nS

Cossⓘ - Output Capacitance: 1550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: D2PAK

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MVB50P03HDLT4G datasheet

 ..1. Size:133K  onsemi
 mvb50p03hdl mvb50p03hdlt4g.pdf pdf_icon

MVB50P03HDLT4G

MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for http //onsemi.com low voltage, high speed switching applications in power supplies, converters and PWM motor... See More ⇒

Detailed specifications: MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL, IRFP450, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L, MVGSF1N03LT1G, MVMBF0201NL, MVSF2N02EL, MVSF2N02ELT1G, MX2N4091

Keywords - MVB50P03HDLT4G MOSFET specs

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