All MOSFET. MVB50P03HDLT4G Datasheet

 

MVB50P03HDLT4G Datasheet and Replacement


   Type Designator: MVB50P03HDLT4G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 340 nS
   Cossⓘ - Output Capacitance: 1550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: D2PAK
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MVB50P03HDLT4G Datasheet (PDF)

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MVB50P03HDLT4G

MTB50P03HDL,MVB50P03HDLT4GP-Channel Power MOSFET50 A, 30 V, Logic Level D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed forhttp://onsemi.comlow voltage, high speed switching applications in power supplies,converters and PWM motor

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY1607P | WSD4080DN56 | P1060AT | GSM4936S | AO4406A | SUM60N02-3M9P | ATM2N65TE

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