MVSF2N02EL MOSFET Datasheet: N-Ch, 20V, 2.8A. Full specification with pinout and replacement list

MVSF2N02EL Specs and Replacement

Type Designator: MVSF2N02EL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT-23

MVSF2N02EL substitution

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MVSF2N02EL datasheet

..1. Size:118K onsemi
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MGSF2N02EL, MVSF2N02EL MOSFET N-Channel, SOT-23 2.8 A, 20 V www.onsemi.com These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal 2.8 A, 20 V for use in space sensitive power management circuitry. RDS(on) = 85 mW (max) Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life N-Channel ... See More ⇒

..2. Size:104K onsemi
mvsf2n02el mvsf2n02elt1g.pdf pdf_icon

MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. 2.8 A, 20 V Features RDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficiency and Extends Battery Life ... See More ⇒

Detailed specifications: MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L, MVGSF1N03LT1G, MVMBF0201NL, IRF1407, MVSF2N02ELT1G, MX2N4091, MX2N4092, MX2N4093, MX2N4856, MX2N4857, MX2N4858, MX2N4859