MX2N5114 Specs and Replacement
Type Designator: MX2N5114
Type of Transistor: JFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 75 Ohm
Package: TO-18
MX2N5114 substitution
- MOSFET ⓘ Cross-Reference Search
MX2N5114 datasheet
mx2n5114 mx2n5115 mx2n5116.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C... See More ⇒
Detailed specifications: MX2N4092, MX2N4093, MX2N4856, MX2N4857, MX2N4858, MX2N4859, MX2N4860, MX2N4861, STF13NM60N, MX2N5115, MX2N5116, MTP3N45, MTP3N50, MTM3N75, MTM3N80, 125N10T, 2SJ156
Keywords - MX2N5114 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: G50N03A | SMF7N65 | SWF2N70D
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