2SK566 Datasheet and Replacement
Type Designator: 2SK566
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO3P
2SK566 substitution
2SK566 Datasheet (PDF)
2sk566.pdf
isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies ,
Datasheet: 2SJ156 , 2SJ171 , 2SK2071-01L , 2SK399 , 2SK400 , 2SK429 , 2SK562 , 2SK564 , IRFB7545 , 2SK602 , 2SK604 , 2SK610 , 2SK616 , 2SK617 , 2SK622 , 2SK627 , 2SK629 .
History: MTW4N80E
Keywords - 2SK566 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MTW4N80E
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