All MOSFET. 40N20 Datasheet

 

40N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: 40N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 163 nC

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO220

40N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

40N20 Datasheet (PDF)

1.1. stf40n20.pdf Size:644K _update

40N20
40N20

STP40N20-STF40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STP40N20 200 V < 0.045 Ω 40 A 160 W STW40N20 200 V < 0.045 Ω 40 A 160 W STB40N20 200 V < 0.045 Ω 40 A 160 W 3 STF40N20 200 V < 0.045 Ω 40 A 40 W 2 3 1 2 ■ TYPICAL RDS(on) = 0.0

1.2. stw40n20.pdf Size:501K _update

40N20
40N20

STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID PW 3 STB40N20 200V <0.045Ω 40A 160W 1 3 2 1 STP40N20 200V <0.045Ω 40A 160W D2PAK TO-220 STP40N20FP 200V <0.045Ω 40A 160W STW40N20 200V <0.045Ω 40A 40W ■ Gate charge minimized ■ Very low i

 1.3. stp40n20.pdf Size:501K _upd

40N20
40N20

STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID PW 3 STB40N20 200V <0.045Ω 40A 160W 1 3 2 1 STP40N20 200V <0.045Ω 40A 160W D2PAK TO-220 STP40N20FP 200V <0.045Ω 40A 160W STW40N20 200V <0.045Ω 40A 40W ■ Gate charge minimized ■ Very low i

1.4. stb40n20.pdf Size:501K _upd

40N20
40N20

STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID PW 3 STB40N20 200V <0.045Ω 40A 160W 1 3 2 1 STP40N20 200V <0.045Ω 40A 160W D2PAK TO-220 STP40N20FP 200V <0.045Ω 40A 160W STW40N20 200V <0.045Ω 40A 40W ■ Gate charge minimized ■ Very low i

 1.5. am40n20-180p.pdf Size:289K _upd-mosfet

40N20
40N20

Analog Power AM40N20-180P N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 180 @ VGS = 10V • Low thermal impedance 200 34a 340 @ VGS = 5.5V • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

1.6. wvm40n20.pdf Size:23K _update_mosfet

40N20

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM40N20(MTM40N20) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

1.7. 40n20.pdf Size:213K _update-mosfet

40N20
40N20

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 40N20 ·FEATURES ·Low R DS(on) ·V Rated at ±20V GS ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power switching applications ·Hard switched and high frequency circuits ·Uninterruptible power su

1.8. mtm40n20.pdf Size:89K _update-mosfet

40N20
40N20



1.9. stb40n20 stp40n20 stp40n20fp stw40n20.pdf Size:501K _st

40N20
40N20

STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PW 3 STB40N20 200V <0.045? 40A 160W 1 3 2 1 STP40N20 200V <0.045? 40A 160W D2PAK TO-220 STP40N20FP 200V <0.045? 40A 160W STW40N20 200V <0.045? 40A 40W Gate charge minimized Very low intrinsic capacitanc

1.10. ssh40n15 ssh40n20.pdf Size:271K _samsung

40N20
40N20



1.11. ixfn140n20p.pdf Size:92K _ixys

40N20
40N20

VDSS = 200 V IXFN 140N20P PolarHTTM HiPerFET ID25 = 115 A Power MOSFET ? ? RDS(on) ? 18 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 150 ns ? ? Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25C to 175C; RGS = 1 M? 200 V E153432 VGS Continuous 20 V S VGSM Transient 30 V G ID25 TC

1.12. ixtk140n20p.pdf Size:162K _ixys

40N20
40N20

VDSS = 200 V IXTK 140N20P PolarHTTM ID25 = 140 A Power MOSFET ? ? RDS(on) ? 18 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 200 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 140 A D (TAB) S ID(RMS) External lead current limit

1.13. ixfr140n20p.pdf Size:139K _ixys

40N20
40N20

VDSS = 200 V IXFR 140N20P PolarHTTM HiPerFET ID25 = 90 A Power MOSFET ? ? RDS(on) ? 22 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? ? 200 ns ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 200 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 20

1.14. ixfk140n20p.pdf Size:225K _ixys

40N20
40N20

VDSS = 200 V IXFK 140N20P PolarHTTMHiPerFET ID25 = 140 A Power MOSFET ? ? RDS(on) ? 18 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 200 V VGS Continous 20 V VGSM Transient 30 V G ID25 TC = 25 C

1.15. mte040n20p3.pdf Size:549K _cystek

40N20
40N20

Spec. No. : C872P3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE040N20P3 ID 50A RDS(ON)@VGS=10V, ID=28A 30.2mΩ(typ) RDS(ON)@VGS=6V, ID=10A 29.3mΩ(typ) Features  Low Gate Charge  Simple Drive Requirement  Pb-free lead plating package Equivalent Circuit Outline MT

1.16. cs40n20f a9h.pdf Size:222K _crhj

40N20
40N20

Silicon N-Channel Power MOSFET R ○ CS40N20F A9H General Description: VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.17. cs40n20f a9e.pdf Size:216K _crhj

40N20
40N20

Silicon N-Channel Power MOSFET R ○ CS40N20F A9E General Description: VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

1.18. cs40n20 a8.pdf Size:216K _crhj

40N20
40N20

Silicon N-Channel Power MOSFET R ○ CS40N20 A8 General Description: VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.19. cs40n20 anh.pdf Size:233K _crhj

40N20
40N20

Silicon N-Channel Power MOSFET R ○ CS40N20 ANH General Description: VDSS 200 V CS40N20 ANH , the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.20. cm40n20 to220.pdf Size:124K _jdsemi

40N20
40N20

R CM40N20 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆200V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 US P 开关电源、逆变器 等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封装外形

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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