40N20 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 40N20 FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power switching applications Hard switched and high frequency circuits Uninterruptible power su

STP40N20-STF40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038 - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP40N20 200 V

STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PW 3 STB40N20 200V

VDSS = 200 V IXFN 140N20P PolarHTTM HiPerFET ID25 = 115 A Power MOSFET RDS(on) 18 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V E153432 VGS Continuous 20 V S

VDSS = 200 V IXFK 140N20P PolarHTTMHiPerFET ID25 = 140 A Power MOSFET RDS(on) 18 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGS Continous 20 V V

VDSS = 200 V IXTK 140N20P PolarHTTM ID25 = 140 A Power MOSFET RDS(on) 18 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 140 A D (TAB) S ID(R

VDSS = 200 V IXFR 140N20P PolarHTTM HiPerFET ID25 = 90 A Power MOSFET RDS(on) 22 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 200 V E153432 VDGR

Analog Power AM40N20-180P N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 180 @ VGS = 10V Low thermal impedance 200 34a 340 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

N N-CHANNEL MOSFET MT40N20A MAIN CHARACTERISTICS Package ID 40A VDSS 200V Rdson-max - 85m (@Vgs=10V Qg-typ 52nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification

Spec. No. C872P3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE040N20P3 ID 50A RDS(ON)@VGS=10V, ID=28A 30.2m (typ) RDS(ON)@VGS=6V, ID=10A 29.3m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MT

BR40N20 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , , , 100 Fast Switching, Low ON Resistance, Low Gate Charge, Low Reverse transfer capacitances,100% Single Pulse

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

R CM40N20 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel Trench-MOS RoHS 1 US P 2 3

N N-CHANNEL MOSFET FHP40N20C MAIN CHARACTERISTICS FEATURES ID 40A Low gate charge VDSS 200V Crss ( 34pF) Low Crss (typical 34pF ) Rdson-typ @Vgs=10V 50m Fast switching Qg-typ 49.4nC 100% 100% avalanche tested dv/dt Improved dv/

N N-CHANNEL MOSFET FHP40N20A MAIN CHARACTERISTICS FEATURES ID 35A Low gate charge VDSS 200V Crss ( 24pF) Low Crss (typical 24pF ) Rdson-typ @Vgs=10V 70m Fast switching Qg-typ 38nC 100% 100% avalanche tested dv/dt Improved dv/dt

PTP40N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 50m 40A RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters G D S DC-AC Inverters for UPS SMPS and Motor controls TO-220 Ordering Information Package Not

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM40N20(MTM40N20) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe

WMB340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description D D D WMB340N20HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060

WML340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WML340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDS Features TO-220F V = 200V, I = 28A

WMM340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMM340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V = 200V, I = 50

WMK340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 200V, I =

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

nvert CS40N20F,CS40N20P Suzhou Convert Semiconductor Co ., Ltd. 200V N-Channel MOSFET FEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode APPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controls Device Marking and Package Information Device Package

FIR40N20LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

HM40N20 N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

HM40N20D N-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

200V N-Channel MOSFET Description MP40N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology

FuXin Semiconductor Co., Ltd. FXN40N20C Series Rev.A General Description Features The FXN40N20C uses advanced Planar Vdmos Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applications

AP40N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP40N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

AP40N20PIT 200V N-Channel Enhancement Mode MOSFET Description The AP40N20P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.