INCHANGE Semiconductorisc N-Channel MOSFET Transistor 40N20FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONPower switching applicationsHard switched and high frequency circuitsUninterruptible power su

STP40N20-STF40N20STB40N20 - STW40N20N-CHANNEL 200V - 0.038 - 40A TO-220/FP/TO-247/D2PAKLOW GATE CHARGE STripFET MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP40N20 200 V

STP40N20 - STF40N20STB40N20 - STW40N20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PW3STB40N20 200V

VDSS = 200 VIXFN 140N20PPolarHTTM HiPerFETID25 = 115 APower MOSFET RDS(on) 18 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VminiBLOC, SOT-227 B (IXFN)VDGR TJ = 25C to 175C; RGS = 1 M 200 VE153432VGS Continuous 20 VS

VDSS = 200 VIXFK 140N20PPolarHTTMHiPerFETID25 = 140 APower MOSFET RDS(on) 18 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGS Continous 20 VV

VDSS = 200 VIXTK 140N20PPolarHTTMID25 = 140 APower MOSFET RDS(on) 18 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 140 A D(TAB)SID(R

VDSS = 200 VIXFR 140N20PPolarHTTM HiPerFETID25 = 90 APower MOSFET RDS(on) 22 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 200 VE153432VDGR

Analog Power AM40N20-180PN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)180 @ VGS = 10V Low thermal impedance 20034a340 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

N N-CHANNEL MOSFET MT40N20A MAIN CHARACTERISTICS Package ID 40A VDSS 200V Rdson-max - 85m (@Vgs=10V Qg-typ 52nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification

Spec. No. : C872P3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE040N20P3 ID 50A RDS(ON)@VGS=10V, ID=28A 30.2m(typ) RDS(ON)@VGS=6V, ID=10A 29.3m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MT

BR40N20 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , , ,100Fast Switching, Low ON Resistance, Low Gate Charge, Low Reverse transfer capacitances,100% Single Pulse

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

RCM40N20 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel Trench-MOS RoHS 1 USP 2 3

N N-CHANNEL MOSFET FHP40N20C MAIN CHARACTERISTICS FEATURES ID 40A Low gate charge VDSS 200V Crss ( 34pF) Low Crss (typical 34pF ) Rdson-typ @Vgs=10V 50m Fast switching Qg-typ 49.4nC 100% 100% avalanche tested dv/dt Improved dv/

N N-CHANNEL MOSFET FHP40N20A MAIN CHARACTERISTICS FEATURES ID 35A Low gate charge VDSS 200V Crss ( 24pF) Low Crss (typical 24pF ) Rdson-typ @Vgs=10V 70m Fast switching Qg-typ 38nC 100% 100% avalanche tested dv/dt Improved dv/dt

PTP40N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 50m 40A RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters G D S DC-AC Inverters for UPS SMPS and Motor controls TO-220 Ordering Information Package Not

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM40N20(MTM40N20) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

WMB340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB340N20HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

WML340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWML340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDSFeatures TO-220F V = 200V, I = 28A

WMM340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V = 200V, I = 50

WMK340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 200V, I =

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package

FIR40N20LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

HM40N20N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

HM40N20DN-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

FuXin Semiconductor Co., Ltd.FXN40N20C Series Rev.AGeneral Description FeaturesThe FXN40N20C uses advanced Planar Vdmos Technology, whichVDS = 200Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applications