All MOSFET. IRFP256 Datasheet

 

IRFP256 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP256

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 275 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 87 nC

Rise Time (tr): 84 nS

Drain-Source Capacitance (Cd): 580 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO247

IRFP256 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP256 Datasheet (PDF)

1.1. irfp254 irfp255 irfp256 irfp257.pdf Size:192K _update-mosfet

IRFP256
IRFP256



1.2. irfp256.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP256 FEATURES ·Drain Current –I = 23A@ T =25℃ D C ·Drain Source Voltage- : V = 275V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.14Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

 4.1. irfp254pbf.pdf Size:1950K _upd-mosfet

IRFP256
IRFP256

PD - 95009 IRFP254PbF • Lead-Free 2/12/04 Document Number: 91214 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214 www.vishay.com 5 IRFP254PbF Document Number: 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Ou

4.2. irfp254n irfp254npbf.pdf Size:123K _upd-mosfet

IRFP256
IRFP256

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.125 • 175 °C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 • Fully Avalanche Rated Qgs (nC) 17 • Fast Switching Qgd (nC) 44 • Ease of Paralleling • Simple Drive Requirements Co

 4.3. irfp250npbf.pdf Size:180K _upd-mosfet

IRFP256
IRFP256

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

4.4. irfp250pbf.pdf Size:3344K _upd-mosfet

IRFP256
IRFP256

PD - 95008 IRFP250PbF • Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

 4.5. irfp250r irfp252r.pdf Size:188K _upd-mosfet

IRFP256
IRFP256



4.6. irfp250mpbf.pdf Size:636K _upd-mosfet

IRFP256
IRFP256

PD - 96292 IRFP250MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

4.7. irfp252.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP252 FEATURES ·Drain Current –I = 27A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.12Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.8. irfp255.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP255 FEATURES ·Drain Current –I = 21A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.17Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.9. irfp254.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP254 FEATURES ·Drain Current –I = 23A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.14Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.10. irfp253.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP253 FEATURES ·Drain Current –I = 27A@ T =25℃ D C ·Drain Source Voltage- : V = 150V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.12Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.11. irfp254a.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP254A FEATURES ·Drain Current –I = 25A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.14Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.12. irfp257.pdf Size:236K _update-mosfet

IRFP256
IRFP256

isc N-Channel MOSFET Transistor IRFP257 FEATURES ·Drain Current –I = 21A@ T =25℃ D C ·Drain Source Voltage- : V = 275V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.17Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.13. irfp250.pdf Size:271K _st

IRFP256
IRFP256

IRFP250 N-CHANNEL 200V - 0.073? - 33A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085? 33 A TYPICAL RDS(on) = 0.073? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

4.14. irfp254b.pdf Size:670K _fairchild_semi

IRFP256
IRFP256

November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching minim

4.15. irfp254pbf.pdf Size:1950K _international_rectifier

IRFP256
IRFP256

PD - 95009 IRFP254PbF Lead-Free 2/12/04 Document Number: 91214 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214 www.vishay.com 5 IRFP254PbF Document Number: 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Outline

4.16. irfp250-253.pdf Size:501K _international_rectifier

IRFP256
IRFP256



4.17. irfp250pbf.pdf Size:1992K _international_rectifier

IRFP256
IRFP256

PD - 95008 IRFP250PbF Lead-Free 2/11/04 Document Number: 91212 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212 www.vishay.com 5 IRFP250PbF Document Number: 91212 www.vishay.com 6 IRFP250PbF TO-247AC Package Outline

4.18. irfp254npbf.pdf Size:189K _international_rectifier

IRFP256
IRFP256

PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175C Operating Temperature l Fast Switching RDS(on) = 125m? l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

4.19. irfp254.pdf Size:162K _international_rectifier

IRFP256
IRFP256

4.20. irfp250.pdf Size:164K _international_rectifier

IRFP256
IRFP256

4.21. irfp250n.pdf Size:122K _international_rectifier

IRFP256
IRFP256

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

4.22. irfp254n.pdf Size:222K _international_rectifier

IRFP256
IRFP256

PD - 94213 IRFP254N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 125m? Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

4.23. irfp250a.pdf Size:926K _samsung

IRFP256
IRFP256

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.24. irfp254a.pdf Size:948K _samsung

IRFP256
IRFP256

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.25. irfp254 sihfp254.pdf Size:1519K _vishay

IRFP256
IRFP256

IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.14 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 71 Simple Drive Requirements Configuration Single Compliant to RoHS Directi

4.26. irfp250 sihfp250.pdf Size:1453K _vishay

IRFP256
IRFP256

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

4.27. irfp254n sihfp254n.pdf Size:155K _vishay

IRFP256
IRFP256

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) (?)VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Configuration Single

4.28. irfp254-257.pdf Size:192K _no

IRFP256
IRFP256



4.29. irfp250npbf.pdf Size:260K _inchange_semiconductor

IRFP256
IRFP256

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

4.30. irfp250m.pdf Size:241K _inchange_semiconductor

IRFP256
IRFP256

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250M,IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

4.31. irfp250n.pdf Size:241K _inchange_semiconductor

IRFP256
IRFP256

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N,IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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