IRFP256 PDF and Equivalents Search

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isc N-Channel MOSFET Transistor IRFP256 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

PD - 95009 IRFP254PbF Lead-Free 2/12/04 Document Number 91214 www.vishay.com 1 IRFP254PbF Document Number 91214 www.vishay.com 2 IRFP254PbF Document Number 91214 www.vishay.com 3 IRFP254PbF Document Number 91214 www.vishay.com 4 IRFP254PbF Document Number 91214 www.vishay.com 5 IRFP254PbF Document Number 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Ou... See More ⇒

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PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

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PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

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PD - 94213 IRFP254N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 125m Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely ... See More ⇒

PD - 96292 IRFP250MPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq... See More ⇒

PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.... See More ⇒

PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175 C Operating Temperature l Fast Switching RDS(on) = 125m l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒

IRFP250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V ... See More ⇒

November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co... See More ⇒

IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.14 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 71 Simple Drive Requirements Configuration Single Complia... See More ⇒

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co... See More ⇒

PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.... See More ⇒

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compli... See More ⇒

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200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology ... See More ⇒

isc N-Channel MOSFET Transistor IRFP252 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

isc N-Channel MOSFET Transistor IRFP255 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250M IIRFP250M FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

iscN-Channel MOSFET Transistor IRFP250 FEATURES Low drain-source on-resistance RDS(ON) 85m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

isc N-Channel MOSFET Transistor IRFP254A FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies... See More ⇒

isc N-Channel MOSFET Transistor IRFP254 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

isc N-Channel MOSFET Transistor IRFP253 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

isc N-Channel MOSFET Transistor IRFP257 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒