DTU40N06 Specs and Replacement
Type Designator: DTU40N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 121 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252
DTU40N06 substitution
- MOSFET ⓘ Cross-Reference Search
DTU40N06 datasheet
dtu40n06.pdf
DTU40N06 N-Channel Enhancement Mode Field Effect Transistor Features Pin Description 60V/40A RDS (ON) = 20m (Type) @ VGS=10V RDS (ON) = 28m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged PIN1 TO-252 package Lead Free and Green Devices Available (ROHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Ba... See More ⇒
dtu40n06.pdf
DTU40N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no... See More ⇒
Detailed specifications: 2SK763, 2SK766, 2SK767, 40N20, FIR4N65F, IRFP256, IRFP257, SUD40N06-25L, IRF630, SUP40N06-25L, SUB40N06-25L, BR80N08A, KIA2806A, SPD22N08S2L-50, SPD50N06S2-14, SPN02N60C3, SPP80N06S2-05
Keywords - DTU40N06 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SM7A24NSU
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