All MOSFET. DTU40N06 Datasheet

 

DTU40N06 Datasheet and Replacement


   Type Designator: DTU40N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 121 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO252
 

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DTU40N06 Datasheet (PDF)

 ..1. Size:205K  daysemi
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DTU40N06

DTU40N06 N-Channel Enhancement Mode Field Effect Transistor Features Pin Description 60V/40ARDS (ON) = 20m (Type) @ VGS=10V RDS (ON) = 28m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and RuggedPIN1 TO-252 packageLead Free and Green Devices Available (ROHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Ba

 ..2. Size:808K  cn vbsemi
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DTU40N06

DTU40N06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

Datasheet: 2SK763 , 2SK766 , 2SK767 , 40N20 , FIR4N65F , IRFP256 , IRFP257 , SUD40N06-25L , 7N65 , SUP40N06-25L , SUB40N06-25L , BR80N08A , KIA2806A , SPD22N08S2L-50 , SPD50N06S2-14 , SPN02N60C3 , SPP80N06S2-05 .

History: SISA18DN | SWD1N60DC | SE3090K

Keywords - DTU40N06 MOSFET datasheet

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