All MOSFET. SUB40N06-25L Datasheet

 

SUB40N06-25L Datasheet and Replacement


   Type Designator: SUB40N06-25L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263
 

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SUB40N06-25L Datasheet (PDF)

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SUB40N06-25L

SUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 4060600.025 @ VGS = 4.5 V 40TO-220ABDTO-263GDRAIN connected to TABG D STop ViewG D SSUB40N06-25L STop ViewN-Channel MOSFETSUP40N06-25LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

Datasheet: 2SK767 , 40N20 , FIR4N65F , IRFP256 , IRFP257 , SUD40N06-25L , DTU40N06 , SUP40N06-25L , 2N7000 , BR80N08A , KIA2806A , SPD22N08S2L-50 , SPD50N06S2-14 , SPN02N60C3 , SPP80N06S2-05 , SPB80N06S2-05 , SPP80N06S2L-07 .

History: IPI040N06N3G | IRF3315L | IPB60R180P7

Keywords - SUB40N06-25L MOSFET datasheet

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