SUB40N06-25L PDF and Equivalents Search

 

SUB40N06-25L Specs and Replacement

Type Designator: SUB40N06-25L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO263

SUB40N06-25L substitution

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SUB40N06-25L datasheet

 ..1. Size:58K  vishay
 sup40n06-25l sub40n06-25l.pdf pdf_icon

SUB40N06-25L

SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 60 60 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S SUB40N06-25L S Top View N-Channel MOSFET SUP40N06-25L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol... See More ⇒

Detailed specifications: 2SK767, 40N20, FIR4N65F, IRFP256, IRFP257, SUD40N06-25L, DTU40N06, SUP40N06-25L, AON7408, BR80N08A, KIA2806A, SPD22N08S2L-50, SPD50N06S2-14, SPN02N60C3, SPP80N06S2-05, SPB80N06S2-05, SPP80N06S2L-07

Keywords - SUB40N06-25L MOSFET specs

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