KIA2806A Datasheet and Replacement
Type Designator: KIA2806A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 857 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220 TO263 TO247 TO3P
- MOSFET Cross-Reference Search
KIA2806A Datasheet (PDF)
kia2806a.pdf

150A60V2806AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS01. Features R =3.5mtyp.@ V =10VDS(on) GS 100% avalanche tested Reliable and rugged Lead free and green device availableRoHS Compliant2. Applications Switching application Power management for inverter systems UPS3.SymbolPin Function1
kia2808a.pdf

150A80V2808AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.0mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1
kia2803a.pdf

150A30V2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKIA2803A designed by the trench processing techniques to achieve extremely low on-resistance.Additional
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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