All MOSFET. GKI04031 Datasheet

 

GKI04031 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GKI04031
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56.1 nC
   trⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: DFN5X6

 GKI04031 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GKI04031 Datasheet (PDF)

 ..1. Size:242K  sanken-ele
gki04031.pdf

GKI04031
GKI04031

40 V, 40 A, 2.9 m Low RDS(ON) N ch Trench Power MOSFET GKI04031 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) DFN 5 6 (L) ID ---------------------------------------------------------- 40 A RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 51.0 A) 8pin 8pin D D D D D D D D Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID =

 8.1. Size:242K  sanken-ele
gki04048.pdf

GKI04031
GKI04031

40 V, 26 A, 4.2 m Low RDS(ON) N ch Trench Power MOSFET GKI04048 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) DFN 5 6 (L) ID ---------------------------------------------------------- 26 A RDS(ON) ---------- 5.4 m max. (VGS = 10 V, ID = 35.4 A) 8pin 8pin D D D D D D D D Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID =

 8.2. Size:361K  sanken-ele
gki04076.pdf

GKI04031
GKI04031

40 V, 26 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET GKI04076 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) DFN 5 6 ID ---------------------------------------------------------- 26 A RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) 8pin 8pin D D D D D D D D Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29

 9.1. Size:361K  sanken-ele
gki04101.pdf

GKI04031
GKI04031

40 V, 26 A, 9.3 m Low RDS(ON) N ch Trench Power MOSFET GKI04101 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) DFN 5 6 ID ---------------------------------------------------------- 26 A RDS(ON) -------- 11.6 m max. (VGS = 10 V, ID = 18.8 A) 8pin 8pin D D D D D D D D Qg ------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.

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History: IRF9622 | IXFL32N120P | IXFK44N50P

 

 
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