All MOSFET. GKI06259 Datasheet

 

GKI06259 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GKI06259
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.7 nC
   trⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0217 Ohm
   Package: DFN5X6

 GKI06259 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GKI06259 Datasheet (PDF)

 ..1. Size:360K  sanken-ele
 gki06259.pdf

GKI06259 GKI06259

60 V, 22 A, 16.5 m Low RDS(ON) N ch Trench Power MOSFET GKI06259 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) DFN 5 6 ID ---------------------------------------------------------- 22 A RDS(ON) -------- 21.7 m max. (VGS = 10 V, ID = 12.5 A) 8pin 8pin D D D D D D D D Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15

 9.1. Size:242K  sanken-ele
 gki06071.pdf

GKI06259 GKI06259

60 V, 40 A, 4.8 m Low RDS(ON) N ch Trench Power MOSFET GKI06071 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) DFN 5 6 (L) ID ---------------------------------------------------------- 40 A RDS(ON) ---------- 6.5 m max. (VGS = 10 V, ID = 34.0 A) 8pin 8pin D D D D D D D D Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID =

 9.2. Size:361K  sanken-ele
 gki06185.pdf

GKI06259 GKI06259

60 V, 26 A, 11.8 m Low RDS(ON) N ch Trench Power MOSFET GKI06185 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) DFN 5 6 ID ---------------------------------------------------------- 26 A RDS(ON) -------- 16.3 m max. (VGS = 10 V, ID = 15.5 A) 8pin 8pin D D D D D D D D Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19

 9.3. Size:242K  sanken-ele
 gki06109.pdf

GKI06259 GKI06259

60 V, 26 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET GKI06109 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) DFN 5 6 (L) ID ---------------------------------------------------------- 26 A RDS(ON) ---------- 9.5 m max. (VGS = 10 V, ID = 23.6 A) 8pin 8pin D D D D D D D D Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 3SK38A

 

 
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