All MOSFET. GMS2301 Datasheet

 

GMS2301 Datasheet and Replacement


   Type Designator: GMS2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-23
 

 GMS2301 substitution

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GMS2301 Datasheet (PDF)

 ..1. Size:262K  gsme
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GMS2301

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMS2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP MOSP MOSPMOS

 8.1. Size:295K  gsme
 gms2302.pdf pdf_icon

GMS2301

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMS2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN MOSN MOSNMOS

Datasheet: GM4947 , GM7002 , GM8205 , GM8205A , GM8205D , GMP3205 , GMP60N06 , GMP80N75 , P60NF06 , GMS2302 , GP1M003A040XG , GP1M003A050HG-FG , GP1M003A050XG , GP1M003A080XG , GP1M003A080XX , GP1M003A090XX , GP1M004A090XX .

History: HYG210P06LQ1D

Keywords - GMS2301 MOSFET datasheet

 GMS2301 cross reference
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