All MOSFET. GP1M003A050HG-FG Datasheet

 

GP1M003A050HG-FG Datasheet and Replacement


   Type Designator: GP1M003A050HG-FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220 TO-220F
      - MOSFET Cross-Reference Search

 

GP1M003A050HG-FG Datasheet (PDF)

 0.1. Size:418K  globalpower
 gp1m003a050hg-fg.pdf pdf_icon

GP1M003A050HG-FG

GP1M003A050HGGP1M003A050FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 2.5A

 3.1. Size:517K  globalpower
 gp1m003a050xg.pdf pdf_icon

GP1M003A050HG-FG

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 5.1. Size:388K  globalpower
 gp1m003a080xx.pdf pdf_icon

GP1M003A050HG-FG

GP1M003A080H/ GP1M003A080FGP1M003A080HH/ GP1M003A080FHVDSS = 880 V @TjmaxFeaturesID = 3A Low gate chargeRDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

 5.2. Size:492K  globalpower
 gp1m003a080xg.pdf pdf_icon

GP1M003A050HG-FG

GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog

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History: VBNC1303 | IRFS4010PBF

Keywords - GP1M003A050HG-FG MOSFET datasheet

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