GP1M008A025XX PDF and Equivalents Search

 

GP1M008A025XX Specs and Replacement

Type Designator: GP1M008A025XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220 TO-220F

GP1M008A025XX substitution

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GP1M008A025XX datasheet

 ..1. Size:381K  globalpower
 gp1m008a025xx.pdf pdf_icon

GP1M008A025XX

GP1M008A025HG GP1M008A025FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒

 5.1. Size:384K  globalpower
 gp1m008a050xx.pdf pdf_icon

GP1M008A025XX

GP1M008A050HG GP1M008A050FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒

 5.2. Size:502K  globalpower
 gp1m008a050xg.pdf pdf_icon

GP1M008A025XX

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒

 5.3. Size:1382K  globalpower
 gp1m008a080xx.pdf pdf_icon

GP1M008A025XX

GP1M008A080H GP1M008A080FH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A ... See More ⇒

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Detailed specifications: GP1M005A050XH, GP1M005A050XX, GP1M005A050XXX, GP1M006A065XH, GP1M006A065XX, GP1M006A070XX, GP1M007A065XX, GP1M007A090XX, 60N06, GP1M008A050XG, GP1M008A050XX, GP1M008A080XX, GP1M009A020XG, GP1M009A020XX, GP1M009A050XXX, GP1M009A060XX, GP1M009A070X

Keywords - GP1M008A025XX MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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