All MOSFET. GP1M008A080XX Datasheet

 

GP1M008A080XX Datasheet and Replacement


   Type Designator: GP1M008A080XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220 TO-220F
      - MOSFET Cross-Reference Search

 

GP1M008A080XX Datasheet (PDF)

 ..1. Size:1382K  globalpower
 gp1m008a080xx.pdf pdf_icon

GP1M008A080XX

GP1M008A080HGP1M008A080FHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge 100% avalanche tested800V 8A

 5.1. Size:384K  globalpower
 gp1m008a050xx.pdf pdf_icon

GP1M008A080XX

GP1M008A050HGGP1M008A050FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 8A

 5.2. Size:502K  globalpower
 gp1m008a050xg.pdf pdf_icon

GP1M008A080XX

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 5.3. Size:381K  globalpower
 gp1m008a025xx.pdf pdf_icon

GP1M008A080XX

GP1M008A025HGGP1M008A025FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested250V 8A

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History: VBE2317 | MC08N005C | IRLR024 | CED05N8 | DH033N03E | AON6794 | BL10N70-A

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