All MOSFET. GP1M009A090N Datasheet

 

GP1M009A090N Datasheet and Replacement


   Type Designator: GP1M009A090N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3PN
 

 GP1M009A090N substitution

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GP1M009A090N Datasheet (PDF)

 ..1. Size:539K  globalpower
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GP1M009A090N

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

 3.1. Size:390K  globalpower
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GP1M009A090N

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 5.1. Size:408K  globalpower
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GP1M009A090N

GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A

 5.2. Size:378K  globalpower
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GP1M009A090N

GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A

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Datasheet: GP1M008A050XG , GP1M008A050XX , GP1M008A080XX , GP1M009A020XG , GP1M009A020XX , GP1M009A050XXX , GP1M009A060XX , GP1M009A070X , IRF540 , GP1M009A090XX , GP1M010A060XX , GP1M010A080N , GP1M010A080XX , GP1M011A050XX , GP1M011A050XXX , GP1M012A060XX , GP1M013A050XX .

History: SML25SCM650N2B | IPP16CN10N

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