GP1M009A090N Datasheet. Specs and Replacement

Type Designator: GP1M009A090N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 184 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3PN

GP1M009A090N substitution

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GP1M009A090N datasheet

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GP1M009A090N

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A ... See More ⇒

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GP1M009A090N

GP1M009A090H GP1M009A090FH VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M009A090H TO-220 GP1M009A090H RoHS GP1M009A090FH TO-220F GP1M009A090FH Halogen Free Absolute M... See More ⇒

 5.1. Size:408K  globalpower
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GP1M009A090N

GP1M009A050HS GP1M009A050FSH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A ... See More ⇒

 5.2. Size:378K  globalpower
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GP1M009A090N

GP1M009A070H GP1M006A070F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 7A ... See More ⇒

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Detailed specifications: GP1M008A050XG, GP1M008A050XX, GP1M008A080XX, GP1M009A020XG, GP1M009A020XX, GP1M009A050XXX, GP1M009A060XX, GP1M009A070X, IRF540N, GP1M009A090XX, GP1M010A060XX, GP1M010A080N, GP1M010A080XX, GP1M011A050XX, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX

Keywords - GP1M009A090N MOSFET specs

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