GP1M010A080XX Datasheet. Specs and Replacement

Type Designator: GP1M010A080XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 53 nC

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 214 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO-220 TO-220F

GP1M010A080XX substitution

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GP1M010A080XX datasheet

 ..1. Size:408K  globalpower
 gp1m010a080xx.pdf pdf_icon

GP1M010A080XX

GP1M010A080H GP1M010A080FH VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A080H TO-220 GP1M010A080H RoHS GP1M010A080FH TO-220F GP1M010A080FH Halogen Free Absolut... See More ⇒

 3.1. Size:550K  globalpower
 gp1m010a080n.pdf pdf_icon

GP1M010A080XX

GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V ... See More ⇒

 5.1. Size:387K  globalpower
 gp1m010a060xx.pdf pdf_icon

GP1M010A080XX

GP1M010A060H GP1M010A060FH VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A060H TO-220 GP1M010A060H RoHS GP1M010A060FH TO-220F GP1M010A060FH Halogen Free Absolute ... See More ⇒

 8.1. Size:389K  globalpower
 gp1m013a050xx.pdf pdf_icon

GP1M010A080XX

GP1M013A050H GP1M013A050FH VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M013A050H TO-220 GP1M013A050H RoHS GP1M013A050FH TO-220F GP1M013A050FH Halogen Free Absolute ... See More ⇒

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Detailed specifications: GP1M009A020XX, GP1M009A050XXX, GP1M009A060XX, GP1M009A070X, GP1M009A090N, GP1M009A090XX, GP1M010A060XX, GP1M010A080N, IRFZ44, GP1M011A050XX, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, GP1M016A025XG, GP1M016A025XX, GP1M016A060N

Keywords - GP1M010A080XX MOSFET specs

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