GP1M010A080XX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GP1M010A080XX
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 290 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 53 nC
Время нарастания (tr): 62 ns
Выходная емкость (Cd): 214 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.05 Ohm
Тип корпуса: TO-220 TO-220F
Аналог (замена) для GP1M010A080XX
GP1M010A080XX Datasheet (PDF)
gp1m010a080xx.pdf
GP1M010A080HGP1M010A080FHVDSS = 880 V @TjmaxFeaturesID = 9.5A Low gate chargeRDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M010A080H TO-220 GP1M010A080H RoHSGP1M010A080FH TO-220F GP1M010A080FH Halogen FreeAbsolut
gp1m010a080n.pdf
GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V
gp1m010a060xx.pdf
GP1M010A060HGP1M010A060FHVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M010A060H TO-220 GP1M010A060H RoHSGP1M010A060FH TO-220F GP1M010A060FH Halogen FreeAbsolute
gp1m013a050xx.pdf
GP1M013A050HGP1M013A050FHVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M013A050H TO-220 GP1M013A050H RoHSGP1M013A050FH TO-220F GP1M013A050FH Halogen FreeAbsolute
gp1m018a020xx.pdf
GP1M018A020HG(H)GP1M018A020FG(H)N-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 18A
gp1m018a020xg.pdf
GP1M018A020CG GP1M018A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A
gp1m015a050xx.pdf
GP1M015A050HGP1M015A050FHVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M015A050H TO-220 GP1M015A050H RoHSGP1M015A050FH TO-220F GP1M015A050FH Halogen FreeAbsolute
gp1m016a025xx.pdf
GP1M016A025HGGP1M016A025FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge250V 16A
gp1m011a050xxx.pdf
GP1M011A050HSGP1M011A050FSHVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast DiodeGP1M011A050FSH TO
gp1m016a060n.pdf
GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
gp1m012a060xx.pdf
GP1M012A060HGP1M012A060FHVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M012A060H TO-220 GP1M012A060H RoHSGP1M012A060FH TO-220F GP1M012A060FH Halogen FreeAbsolute
gp1m016a060xx.pdf
GP1M016A060HGP1M016A060F(H)N-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 16A
gp1m011a050xx.pdf
GP1M011A050HGP1M011A050FHVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050H TO-220 GP1M011A050H RoHSGP1M011A050FH TO-220F GP1M011A0
gp1m016a025xg.pdf
GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A
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