All MOSFET. GP1M012A060XX Datasheet

 

GP1M012A060XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP1M012A060XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220 TO-220F

 GP1M012A060XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M012A060XX Datasheet (PDF)

 ..1. Size:385K  globalpower
gp1m012a060xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M012A060HGP1M012A060FHVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M012A060H TO-220 GP1M012A060H RoHSGP1M012A060FH TO-220F GP1M012A060FH Halogen FreeAbsolute

 8.1. Size:389K  globalpower
gp1m013a050xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M013A050HGP1M013A050FHVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M013A050H TO-220 GP1M013A050H RoHSGP1M013A050FH TO-220F GP1M013A050FH Halogen FreeAbsolute

 8.2. Size:370K  globalpower
gp1m018a020xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M018A020HG(H)GP1M018A020FG(H)N-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 18A

 8.3. Size:488K  globalpower
gp1m018a020xg.pdf

GP1M012A060XX GP1M012A060XX

GP1M018A020CG GP1M018A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A

 8.4. Size:392K  globalpower
gp1m015a050xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M015A050HGP1M015A050FHVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M015A050H TO-220 GP1M015A050H RoHSGP1M015A050FH TO-220F GP1M015A050FH Halogen FreeAbsolute

 8.5. Size:391K  globalpower
gp1m016a025xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M016A025HGGP1M016A025FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge250V 16A

 8.6. Size:395K  globalpower
gp1m011a050xxx.pdf

GP1M012A060XX GP1M012A060XX

GP1M011A050HSGP1M011A050FSHVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast DiodeGP1M011A050FSH TO

 8.7. Size:563K  globalpower
gp1m016a060n.pdf

GP1M012A060XX GP1M012A060XX

GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

 8.8. Size:391K  globalpower
gp1m016a060xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M016A060HGP1M016A060F(H)N-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 16A

 8.9. Size:387K  globalpower
gp1m010a060xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M010A060HGP1M010A060FHVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M010A060H TO-220 GP1M010A060H RoHSGP1M010A060FH TO-220F GP1M010A060FH Halogen FreeAbsolute

 8.10. Size:395K  globalpower
gp1m011a050xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M011A050HGP1M011A050FHVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050H TO-220 GP1M011A050H RoHSGP1M011A050FH TO-220F GP1M011A0

 8.11. Size:521K  globalpower
gp1m016a025xg.pdf

GP1M012A060XX GP1M012A060XX

GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A

 8.12. Size:550K  globalpower
gp1m010a080n.pdf

GP1M012A060XX GP1M012A060XX

GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V

 8.13. Size:408K  globalpower
gp1m010a080xx.pdf

GP1M012A060XX GP1M012A060XX

GP1M010A080HGP1M010A080FHVDSS = 880 V @TjmaxFeaturesID = 9.5A Low gate chargeRDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M010A080H TO-220 GP1M010A080H RoHSGP1M010A080FH TO-220F GP1M010A080FH Halogen FreeAbsolut

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFP26N60L

 

 
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