All MOSFET. GP1M016A060XX Datasheet

 

GP1M016A060XX Datasheet and Replacement


   Type Designator: GP1M016A060XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-220 TO-220F
      - MOSFET Cross-Reference Search

 

GP1M016A060XX Datasheet (PDF)

 ..1. Size:391K  globalpower
 gp1m016a060xx.pdf pdf_icon

GP1M016A060XX

GP1M016A060HGP1M016A060F(H)N-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 16A

 3.1. Size:563K  globalpower
 gp1m016a060n.pdf pdf_icon

GP1M016A060XX

GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

 5.1. Size:391K  globalpower
 gp1m016a025xx.pdf pdf_icon

GP1M016A060XX

GP1M016A025HGGP1M016A025FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge250V 16A

 5.2. Size:521K  globalpower
 gp1m016a025xg.pdf pdf_icon

GP1M016A060XX

GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFS9131 | TSM4424CS | LKK47-06C5 | MSD40P03 | BFC24 | SLF13N50A | BRCS200P03DP

Keywords - GP1M016A060XX MOSFET datasheet

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