GP1M020A060N Datasheet and Replacement
Type Designator: GP1M020A060N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-3PN
GP1M020A060N substitution
GP1M020A060N Datasheet (PDF)
gp1m020a060n.pdf
GP1M020A060N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A
gp1m020a060m.pdf
GP1M020A060M VDSS = 660 V @Tjmax Features ID = 20A Low gate charge RDS(on) = 0.33 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification TO-3P D G S Device Package Marking Remark GP1M020A060M TO-3P GP1M020A060M RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS
gp1m020a050n.pdf
GP1M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A
gp1m023a050n.pdf
GP1M023A050N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A
Datasheet: GP1M016A025XG , GP1M016A025XX , GP1M016A060N , GP1M016A060XX , GP1M018A020XG , GP1M018A020XX , GP1M020A050N , GP1M020A060M , IRFB4115 , GP1M023A050N , GP1T025A120B , GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , GP2M002A060XG .
History: BUK9E1R9-40E | 2SK2522-01MR
Keywords - GP1M020A060N MOSFET datasheet
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History: BUK9E1R9-40E | 2SK2522-01MR
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