GP1M023A050N Datasheet. Specs and Replacement

Type Designator: GP1M023A050N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 357 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-3PN

GP1M023A050N substitution

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GP1M023A050N datasheet

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GP1M023A050N

GP1M023A050N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A ... See More ⇒

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GP1M023A050N

GP1M020A060N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A ... See More ⇒

 8.2. Size:541K  globalpower
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GP1M023A050N

GP1M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A ... See More ⇒

 8.3. Size:688K  globalpower
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GP1M023A050N

GP1M020A060M VDSS = 660 V @Tjmax Features ID = 20A Low gate charge RDS(on) = 0.33 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification TO-3P D G S Device Package Marking Remark GP1M020A060M TO-3P GP1M020A060M RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS ... See More ⇒

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Detailed specifications: GP1M016A025XX, GP1M016A060N, GP1M016A060XX, GP1M018A020XG, GP1M018A020XX, GP1M020A050N, GP1M020A060M, GP1M020A060N, 8205A, GP1T025A120B, GP1T036A060B, GP1T040A120B, GP1T072A060B, GP1T080A120B, GP1T160A120B, GP2M002A060XG, GP2M002A060XX

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