GP1M023A050N Datasheet and Replacement. Cross Reference Search

GP1M023A050N Datasheet (PDF)

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GP1M023A050N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A

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GP1M020A060N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

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GP1M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

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GP1M020A060M VDSS = 660 V @Tjmax Features ID = 20A Low gate charge RDS(on) = 0.33 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification TO-3P D G S Device Package Marking Remark GP1M020A060M TO-3P GP1M020A060M RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS

Datasheet: GP1M016A025XX , GP1M016A060N , GP1M016A060XX , GP1M018A020XG , GP1M018A020XX , GP1M020A050N , GP1M020A060M , GP1M020A060N , IRF630 , GP1T025A120B , GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , GP2M002A060XG , GP2M002A060XX .