GP2M002A060XX Datasheet. Specs and Replacement

Type Designator: GP2M002A060XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-252 TO-251

GP2M002A060XX substitution

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GP2M002A060XX datasheet

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GP2M002A060XX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

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GP2M002A060XX

GP2M002A060HG GP2M002A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

 4.1. Size:394K  globalpower
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GP2M002A060XX

GP2M002A065HG GP2M002A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

 4.2. Size:499K  globalpower
 gp2m002a065xg.pdf pdf_icon

GP2M002A060XX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

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Detailed specifications: GP1M023A050N, GP1T025A120B, GP1T036A060B, GP1T040A120B, GP1T072A060B, GP1T080A120B, GP1T160A120B, GP2M002A060XG, 2N7002, GP2M002A065XG, GP2M002A065XX, GP2M004A060XG, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.