All MOSFET. GP2M002A060XX Datasheet

 

GP2M002A060XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M002A060XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-252 TO-251

 GP2M002A060XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M002A060XX Datasheet (PDF)

 ..1. Size:505K  globalpower
 gp2m002a060xx.pdf

GP2M002A060XX GP2M002A060XX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 2.1. Size:405K  globalpower
 gp2m002a060xg.pdf

GP2M002A060XX GP2M002A060XX

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

 4.1. Size:394K  globalpower
 gp2m002a065xx.pdf

GP2M002A060XX GP2M002A060XX

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 4.2. Size:499K  globalpower
 gp2m002a065xg.pdf

GP2M002A060XX GP2M002A060XX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPS80R900P7

 

 
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