All MOSFET. GP2M002A065XG Datasheet

 

GP2M002A065XG Datasheet and Replacement


   Type Designator: GP2M002A065XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-252 TO-251
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GP2M002A065XG Datasheet (PDF)

 ..1. Size:499K  globalpower
 gp2m002a065xg.pdf pdf_icon

GP2M002A065XG

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 2.1. Size:394K  globalpower
 gp2m002a065xx.pdf pdf_icon

GP2M002A065XG

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 4.1. Size:505K  globalpower
 gp2m002a060xx.pdf pdf_icon

GP2M002A065XG

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 4.2. Size:405K  globalpower
 gp2m002a060xg.pdf pdf_icon

GP2M002A065XG

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W

Keywords - GP2M002A065XG MOSFET datasheet

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