GP2M004A060XG Datasheet. Specs and Replacement

Type Designator: GP2M004A060XG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-252 TO-251

GP2M004A060XG substitution

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GP2M004A060XG datasheet

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GP2M004A060XG

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒

 2.1. Size:419K  globalpower
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GP2M004A060XG

GP2M004A060HG GP2M004A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒

 4.1. Size:395K  globalpower
 gp2m004a065xx.pdf pdf_icon

GP2M004A060XG

GP2M004A065HG GP2M004A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

 4.2. Size:503K  globalpower
 gp2m004a065xg.pdf pdf_icon

GP2M004A060XG

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

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Detailed specifications: GP1T040A120B, GP1T072A060B, GP1T080A120B, GP1T160A120B, GP2M002A060XG, GP2M002A060XX, GP2M002A065XG, GP2M002A065XX, IRLB4132, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, GP2M007A065XG

Keywords - GP2M004A060XG MOSFET specs

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