All MOSFET. GP2M004A060XX Datasheet

 

GP2M004A060XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M004A060XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220 TO-220F

 GP2M004A060XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M004A060XX Datasheet (PDF)

 ..1. Size:419K  globalpower
gp2m004a060xx.pdf

GP2M004A060XX
GP2M004A060XX

GP2M004A060HGGP2M004A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.0A

 2.1. Size:514K  globalpower
gp2m004a060xg.pdf

GP2M004A060XX
GP2M004A060XX

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 4.1. Size:395K  globalpower
gp2m004a065xx.pdf

GP2M004A060XX
GP2M004A060XX

GP2M004A065HGGP2M004A065FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 4.0A

 4.2. Size:503K  globalpower
gp2m004a065xg.pdf

GP2M004A060XX
GP2M004A060XX

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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