All MOSFET. GP2M005A060XG Datasheet

 

GP2M005A060XG MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M005A060XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-220 TO-220F

 GP2M005A060XG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M005A060XG Datasheet (PDF)

 ..1. Size:410K  globalpower
gp2m005a060xg.pdf

GP2M005A060XG GP2M005A060XG

GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A

 2.1. Size:507K  globalpower
gp2m005a060xxx.pdf

GP2M005A060XG GP2M005A060XG

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

 5.1. Size:366K  globalpower
gp2m005a050xx.pdf

GP2M005A060XG GP2M005A060XG

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

 5.2. Size:500K  globalpower
gp2m005a050xg.pdf

GP2M005A060XG GP2M005A060XG

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top