GP2M005A060XG Datasheet. Specs and Replacement

Type Designator: GP2M005A060XG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220 TO-220F

GP2M005A060XG substitution

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GP2M005A060XG datasheet

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GP2M005A060XG

GP2M005A060HG GP2M005A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

 2.1. Size:507K  globalpower
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GP2M005A060XG

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

 5.1. Size:366K  globalpower
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GP2M005A060XG

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

 5.2. Size:500K  globalpower
 gp2m005a050xg.pdf pdf_icon

GP2M005A060XG

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

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Detailed specifications: GP2M002A065XG, GP2M002A065XX, GP2M004A060XG, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, SKD502T, GP2M005A060XXX, GP2M007A065XG, GP2M007A080F, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X

Keywords - GP2M005A060XG MOSFET specs

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