GP2M010A065X Datasheet. Specs and Replacement

Type Designator: GP2M010A065X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 156 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm

Package: TO-220 TO-220F

GP2M010A065X substitution

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GP2M010A065X datasheet

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GP2M010A065X

GP2M010A065H GP2M010A065F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A ... See More ⇒

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GP2M010A065X

GP2M010A060H GP2M010A060F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A ... See More ⇒

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GP2M010A065X

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A ... See More ⇒

 8.2. Size:242K  globalpower
 gp2m013a050f.pdf pdf_icon

GP2M010A065X

GP2M013A050F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A ... See More ⇒

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Detailed specifications: GP2M005A060XXX, GP2M007A065XG, GP2M007A080F, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, IRF530, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, GP2M020A050X, GP2M020A060N, GP2M023A050N

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