All MOSFET. GSM1024E Datasheet

 

GSM1024E MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM1024E
   Marking Code: B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.06 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-563

 GSM1024E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM1024E Datasheet (PDF)

 ..1. Size:937K  globaltech semi
 gsm1024e.pdf

GSM1024E GSM1024E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m@VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

 7.1. Size:940K  globaltech semi
 gsm1024.pdf

GSM1024E GSM1024E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

 8.1. Size:972K  globaltech semi
 gsm1023.pdf

GSM1024E GSM1024E

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

 8.2. Size:1054K  globaltech semi
 gsm1026s.pdf

GSM1024E GSM1024E

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

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