All MOSFET. GSM1073E Datasheet

 

GSM1073E Datasheet and Replacement


   Type Designator: GSM1073E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT-723
 

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GSM1073E Datasheet (PDF)

 ..1. Size:625K  globaltech semi
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GSM1073E

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

 7.1. Size:957K  globaltech semi
 gsm1073.pdf pdf_icon

GSM1073E

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are part

 8.1. Size:1003K  globaltech semi
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GSM1073E

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

 8.2. Size:515K  globaltech semi
 gsm1072e.pdf pdf_icon

GSM1073E

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

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Datasheet: GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 , GSM1072E , GSM1073 , IRFZ24N , GSM1303 , GSM1304 , GSM1304E , GSM1306 , GSM1330S , GSM1413 , GSM1433 , GSM1443 .

History: GSM1072E

Keywords - GSM1073E MOSFET datasheet

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