GSM1073E Datasheet. Specs and Replacement

Type Designator: GSM1073E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SOT-723

GSM1073E substitution

- MOSFET ⓘ Cross-Reference Search

 

GSM1073E datasheet

 ..1. Size:625K  globaltech semi
 gsm1073e.pdf pdf_icon

GSM1073E

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui... See More ⇒

 7.1. Size:957K  globaltech semi
 gsm1073.pdf pdf_icon

GSM1073E

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V Low Offset (Error) Voltage These devices are part... See More ⇒

 8.1. Size:1003K  globaltech semi
 gsm1072.pdf pdf_icon

GSM1073E

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low ... See More ⇒

 8.2. Size:515K  globaltech semi
 gsm1072e.pdf pdf_icon

GSM1073E

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo... See More ⇒

SHOW MORE

Detailed specifications: GSM1024, GSM1024E, GSM1026S, GSM1032, GSM1034, GSM1072, GSM1072E, GSM1073, IRFZ24N, GSM1303, GSM1304, GSM1304E, GSM1306, GSM1330S, GSM1413, GSM1433, GSM1443

Keywords - GSM1073E MOSFET specs

 GSM1073E cross reference

 GSM1073E equivalent finder

 GSM1073E pdf lookup

 GSM1073E substitution

 GSM1073E replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs