GSM1304 Datasheet. Specs and Replacement

Type Designator: GSM1304

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-323

GSM1304 substitution

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GSM1304 datasheet

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GSM1304

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒

 0.1. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

GSM1304

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m @VGS=1.8V Super high density cell design for extremely These devi... See More ⇒

 8.1. Size:1193K  globaltech semi
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GSM1304

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒

 8.2. Size:1006K  globaltech semi
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GSM1304

GSM1303 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1303, P-Channel enhancement mode -20V/-0.45A , RDS(ON)= 600m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A , RDS(ON)= 800m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A , RDS(ON)= 1300m @VGS=-1.8V Super high density cell design for extremely These de... See More ⇒

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Detailed specifications: GSM1026S, GSM1032, GSM1034, GSM1072, GSM1072E, GSM1073, GSM1073E, GSM1303, 8N60, GSM1304E, GSM1306, GSM1330S, GSM1413, GSM1433, GSM1443, GSM1563, GSM1810

Keywords - GSM1304 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.