GSM1306 Datasheet. Specs and Replacement

Type Designator: GSM1306

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: SOT-323

GSM1306 substitution

- MOSFET ⓘ Cross-Reference Search

 

GSM1306 datasheet

 ..1. Size:1193K  globaltech semi
 gsm1306.pdf pdf_icon

GSM1306

GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒

 8.1. Size:934K  globaltech semi
 gsm1304.pdf pdf_icon

GSM1306

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m @VGS=1.8V Super high density cell design for extremely These device... See More ⇒

 8.2. Size:936K  globaltech semi
 gsm1304e.pdf pdf_icon

GSM1306

GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m @VGS=1.8V Super high density cell design for extremely These devi... See More ⇒

 8.3. Size:1006K  globaltech semi
 gsm1303.pdf pdf_icon

GSM1306

GSM1303 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1303, P-Channel enhancement mode -20V/-0.45A , RDS(ON)= 600m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A , RDS(ON)= 800m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A , RDS(ON)= 1300m @VGS=-1.8V Super high density cell design for extremely These de... See More ⇒

SHOW MORE

Detailed specifications: GSM1034, GSM1072, GSM1072E, GSM1073, GSM1073E, GSM1303, GSM1304, GSM1304E, 75N75, GSM1330S, GSM1413, GSM1433, GSM1443, GSM1563, GSM1810, GSM1912, GSM1913

Keywords - GSM1306 MOSFET specs

 GSM1306 cross reference

 GSM1306 equivalent finder

 GSM1306 pdf lookup

 GSM1306 substitution

 GSM1306 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs