GSM1433 Datasheet. Specs and Replacement

Type Designator: GSM1433

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-323

GSM1433 substitution

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GSM1433 datasheet

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GSM1433

GSM1433 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM1433, P-Channel enhancement mode -30V/-3.0A , RDS(ON)= 150m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.6A , RDS(ON)= 185m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly su... See More ⇒

 9.1. Size:808K  globaltech semi
 gsm1413.pdf pdf_icon

GSM1433

GSM1413 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1413, P-Channel enhancement mode -20V/-3.0A , RDS(ON)= 125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A , RDS(ON)= 160m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly sui... See More ⇒

 9.2. Size:873K  globaltech semi
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GSM1433

GSM1443 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1443, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 78m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A , RDS(ON)= 105m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

Detailed specifications: GSM1073, GSM1073E, GSM1303, GSM1304, GSM1304E, GSM1306, GSM1330S, GSM1413, STP65NF06, GSM1443, GSM1563, GSM1810, GSM1912, GSM1913, GSM2014, GSM2301, GSM2301A

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