All MOSFET. GSM1810 Datasheet

 

GSM1810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM1810
   Marking Code: 1810
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOP-8P

 GSM1810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM1810 Datasheet (PDF)

 ..1. Size:938K  globaltech semi
 gsm1810.pdf

GSM1810 GSM1810

GSM1810 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM1810, P-Channel enhancement mode -100V/-2.0A,RDS(ON)=230m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-1.0A,RDS(ON)=245m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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