GSM1810 Datasheet. Specs and Replacement

Type Designator: GSM1810

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: SOP-8P

GSM1810 substitution

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GSM1810 datasheet

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GSM1810

GSM1810 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM1810, P-Channel enhancement mode -100V/-2.0A,RDS(ON)=230m @VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-1.0A,RDS(ON)=245m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

Detailed specifications: GSM1304, GSM1304E, GSM1306, GSM1330S, GSM1413, GSM1433, GSM1443, GSM1563, IRFZ48N, GSM1912, GSM1913, GSM2014, GSM2301, GSM2301A, GSM2301AS, GSM2301S, GSM2302AS

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.