All MOSFET. GSM1810 Datasheet

 

GSM1810 Datasheet and Replacement


   Type Designator: GSM1810
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOP-8P
 

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GSM1810 Datasheet (PDF)

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GSM1810

GSM1810 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM1810, P-Channel enhancement mode -100V/-2.0A,RDS(ON)=230m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-1.0A,RDS(ON)=245m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

Datasheet: GSM1304 , GSM1304E , GSM1306 , GSM1330S , GSM1413 , GSM1433 , GSM1443 , GSM1563 , RU7088R , GSM1912 , GSM1913 , GSM2014 , GSM2301 , GSM2301A , GSM2301AS , GSM2301S , GSM2302AS .

History: AONS36304

Keywords - GSM1810 MOSFET datasheet

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