All MOSFET. GSM1913 Datasheet

 

GSM1913 Datasheet and Replacement


   Type Designator: GSM1913
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT-363
 

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GSM1913 Datasheet (PDF)

 ..1. Size:998K  globaltech semi
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GSM1913

GSM1913 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1913, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=600m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=800m@VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-0.4A,RDS(ON)=1600m@VGS=-1.8V Low Offset (Error) Voltage These devices are particu

 8.1. Size:907K  globaltech semi
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GSM1913

GSM1912 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1912, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited f

Datasheet: GSM1306 , GSM1330S , GSM1413 , GSM1433 , GSM1443 , GSM1563 , GSM1810 , GSM1912 , IRF1405 , GSM2014 , GSM2301 , GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 .

History: BUK7K12-60E | STRH40N6 | 2SK2884B | SDF460JED | AP9430AGYT-HF | FQU2N80 | 2SK3484

Keywords - GSM1913 MOSFET datasheet

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