GSM1913 Datasheet. Specs and Replacement

Type Designator: GSM1913

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-363

GSM1913 substitution

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GSM1913 datasheet

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GSM1913

GSM1913 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1913, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=600m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=800m @VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-0.4A,RDS(ON)=1600m @VGS=-1.8V Low Offset (Error) Voltage These devices are particu... See More ⇒

 8.1. Size:907K  globaltech semi
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GSM1913

GSM1912 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1912, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited f... See More ⇒

Detailed specifications: GSM1306, GSM1330S, GSM1413, GSM1433, GSM1443, GSM1563, GSM1810, GSM1912, IRF830, GSM2014, GSM2301, GSM2301A, GSM2301AS, GSM2301S, GSM2302AS, GSM2302S, GSM2303

Keywords - GSM1913 MOSFET specs

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